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| AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD402 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, laod switching and general purpose applications. Standard Product AOD402 is Pb-free (meets ROHS & Sony 259 specifications). AOD402L is a Green Product ordering option. AOD402 and AOD402L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 18 A (VGS = 20V) RDS(ON) < 15 m (VGS = 20V) RDS(ON) < 18 m (VGS = 10V) RDS(ON) < 44 m (VGS = 4.5V) Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C Maximum 30 25 18 12 40 18 40 60 30 2.5 1.6 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH C Power Dissipation Power Dissipation B TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 16.7 40 1.9 Max 25 50 2.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD402 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=20V, ID=18A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=10V, ID=18A VGS=4.5V, ID=6A gFS VSD IS Forward Transconductance VDS=5V, ID=18A IS=18A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 1 40 12 17.4 15 36 24 0.8 1 18 769 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 185 131 0.7 15.9 VGS=10V, VDS=10V, ID=18A 2.44 4.92 6.2 VGS=10V, VDS=15V, ID=18A, RL=0.82, RGEN=3 IF=18A, dI/dt=100A/s 10.9 16 4.8 18 8.1 15 21 18 44 m S V A pF pF pF nC nC nC ns ns ns ns ns nC 2.4 Min 30 1 5 100 3 Typ Max Units V A nA V A m STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depend on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 35 30 25 ID (A) 20 15 10 5 3.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics VGS=4V ID(A) 4.5V 6V 25 7V 5V 20 15 10 5 25C 125C VDS=5V 30 60 50 RDS(ON) (m) 40 30 20 10 VGS=20V 0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V, 18A VGS=20V,18A 60 50 RDS(ON) (m) 40 30 125C 20 10 0 4 8 12 16 20 25C IS (A) ID=18A 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOD402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 8 VGS (Volts) 6 4 2 200 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 1ms 10ms 0.1s 1s 1.0 10s DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJA Normalized Transient Thermal Resistance 100s Power (W) 40 30 20 10 0 0.001 Crss 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VDS=15V ID=18A Capacitance (pF) 1000 Ciss 800 600 Coss 400 60 50 TJ(Max)=150C TA=25C 10.0 ID (Amps) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. |
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